Job description

At Alpha and Omega Semiconductor (AOS), we design, develop and globally supply a broad range of power semiconductors, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, GaN/SiC, Power IC and Digital Power products. You will find our products in everyday applications including personal computers, graphic cards, gaming consoles, TVs, home appliances, smart phones, power tools, and more! At the center of our innovation is our people who bring passion, talent, and a collaborative atmosphere to our growing company. We offer an impressive benefit package and career development opportunities. If you are ready to take the next step in your career working with a team of passionate and talented people, then take a look at the job opportunity below to POWER your career! Primary Job Duties: • Design GaN HEMT transistors for power conversion applications • Perform analytical analysis of designs through TCAD or other methods as needed • Work with foundries to evaluate, design, and qualify products meeting yield, performance, and quality metrics • Direct and perform layouts and T/O procedures • Characterize and benchmark designs with competitors • Analyze electrical characterization data with statistical software, write reports, and present results • Work closely with the product engineering teams to define test, reliability, and qualification requirements Qualifications: • MS degree in Electrical Engineer required, PhD preferred • 3+ years GaN design experience • Strong knowledgeable in industry qualification standards such as JEDEC, AEC-Q101, and AQG 324 • Hands-on experience in device layout, testing, and fabrication methods • Thorough understanding of high voltage GaN HEMT physics and layout techniques • Understand characterization methods of HV GaN devices (switching, dynamic-Ron, etc.) • Excellent written reporting and presentation skills Alpha and Omega Semiconductor, Inc is committed to diversity in our workplace. Qualified applicants will receive consideration for employment without regard to, and will not be discriminated against based on race, age, color, ethnicity, marital status, sex, religion, national origin, sexual orientation, gender, gender identity, disability, protected veteran status or any other category protected by federal, state or local law.

Requirements

Must-haves

Design GaN HEMT transistors for power conversion applications
Perform analytical analysis of designs through TCAD or other methods as needed
Work with foundries to evaluate, design, and qualify products meeting yield, performance, and quality metrics
Direct and perform layouts and T/O procedures
Characterize and benchmark designs with competitors
Analyze electrical characterization data with statistical software, write reports, and present results
Work closely with the product engineering teams to define test, reliability, and qualification requirements
3+ years GaN design experience
Strong knowledgeable in industry qualification standards such as JEDEC, AEC-Q101, and AQG 324
Hands-on experience in device layout, testing, and fabrication methods
Thorough understanding of high voltage GaN HEMT physics and layout techniques
Understand characterization methods of HV GaN devices (switching, dynamic-Ron, etc.)
Excellent written reporting and presentation skills

Nice-to-haves

MS degree in Electrical Engineer required, PhD preferred

Application prep

Use the role’s language and application details while tailoring your materials.

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