Job description

COMPANY DESCRIPTION Vertical Semiconductor, a venture-backed MIT spin-out, is leading the development of vertical gallium nitride (GaN) power electronics to build the foundational power layer for the next generation of compute and AI. ROLE DESCRIPTION Vertical Semiconductor is seeking a Principal Semiconductor Device Engineer to serve as a senior technical contributor in the development and commercialization of our vertical GaN power device technology. This is a hands-on role is intended for an engineer with around 10-20 years of semiconductor R&D experience who can operate at the intersection of device physics, process integration, and manufacturability. In this role, you will provide deep technical leadership across device architecture, process development, modeling, and characterization, while working closely with cross-functional partners in epitaxy, process engineering, packaging, reliability, and systems. You will play a critical role in defining device roadmaps, de-risking technology transitions, and guiding decisions that directly impact product performance and scalability. This position offers the opportunity to help shape a world-changing power electronics platform at a pivotal stage, with direct influence on the company’s technical direction and long-term success. We prefer candidates who can work from our office at Greentown Labs (Somerville, MA). KEY RESPONSIBILITIES - Serve as a technical subject-matter expert for vertical GaN and wide-bandgap power devices across the full R&D lifecycle, from concept through early production readiness - Lead the definition and evolution of device architectures, performance targets, and design trade-offs for next-generation vertical GaN power devices - Drive device modeling, simulation, and analytical understanding to guide design optimization, scaling strategies, and reliability improvements - Plan and execute device development programs in shared fabs and external foundries, including technology transfer and process co-development - Partner closely with internal and external teams on CMOS-compatible GaN process integration, yield learning, and manufacturability - Provide technical leadership in failure analysis, reliability physics, and root-cause investigations for wide-bandgap power devices - Oversee and interpret on-wafer and discrete device characterization, including DC, CV, dynamic, and high-power testing - Develop and review GDS layouts, test structures, and evaluation vehicles to support device learning and validation - Support system-level understanding through application evaluation boards, measurements, and correlation to device behavior - Mentor junior engineers and influence technical best practices through informal technical leadership, design reviews, and knowledge sharing - Contribute to IP development, publications, and external technical engagements as appropriate QUALIFICATIONS - PhD or equivalent industry experience in Electrical Engineering, Physics, Materials Science, or Device Engineering - Approximately 15–25 years of professional R&D experience in semiconductor device development - Deep expertise in GaN or other wide-bandgap semiconductors (e.g., SiC), with a strong preference for power device experience - Demonstrated track record of technical impact and innovation in advanced device development programs REQUIRED TECHNICAL SKILLS & EXPERIENCE - Extensive experience with power device design in GaN and/or SiC, including vertical device concepts - In-depth understanding of semiconductor manufacturing processes, integration challenges, and yield considerations - Proven experience working in shared fab and foundry environments, including external technology transfers - Strong proficiency in TCAD simulation for device physics, scaling, and optimization - Advanced data analysis skills using Python, MATLAB, or equivalent tools - Hands-on experience with GDS layout and test structure design - Expertise in wide-bandgap power device failure analysis and reliability physics - Experience with on-wafer automated DC/CV/dynamic testing and discrete component characterization - Ability to perform analytical calculations, simulations, design, build, and measure application evaluation boards as needed - Excellent communication skills with the ability to collaborate effectively across disciplines and with external partners VALUES & CULTURE FIT Vertical Semiconductor is seeking an engineer who is not only capable of accelerating the technical vision of the company but is also willing to get involved in the day-to-day execution of a startup. The ideal candidate is someone who enjoys tackling complex engineering challenges, is comfortable with a hands-on approach in a collaborative arena and thrives in a startup environment where they can make an immediate impact. We value integrity, initiative, problem-solving, creativity and a passion for creating transformative technology that can change industries and improve the world. COMPENSATION We offer a competitive salary and comprehensive benefits package with participation in our stock option program that is commensurable with candidates’ experience and impact.

Requirements

Must-haves

Vertical Semiconductor, a venture-backed MIT spin-out, is leading the development of vertical gallium nitride (GaN) power electronics to build the foundational power layer for the next generation of compute and AI.
Serve as a technical subject-matter expert for vertical GaN and wide-bandgap power devices across the full R&D lifecycle, from concept through early production readiness
Lead the definition and evolution of device architectures, performance targets, and design trade-offs for next-generation vertical GaN power devices
Drive device modeling, simulation, and analytical understanding to guide design optimization, scaling strategies, and reliability improvements
Plan and execute device development programs in shared fabs and external foundries, including technology transfer and process co-development
Partner closely with internal and external teams on CMOS-compatible GaN process integration, yield learning, and manufacturability
Provide technical leadership in failure analysis, reliability physics, and root-cause investigations for wide-bandgap power devices
Oversee and interpret on-wafer and discrete device characterization, including DC, CV, dynamic, and high-power testing
Develop and review GDS layouts, test structures, and evaluation vehicles to support device learning and validation
Support system-level understanding through application evaluation boards, measurements, and correlation to device behavior
Mentor junior engineers and influence technical best practices through informal technical leadership, design reviews, and knowledge sharing
Contribute to IP development, publications, and external technical engagements as appropriate
PhD or equivalent industry experience in Electrical Engineering, Physics, Materials Science, or Device Engineering
Approximately 15–25 years of professional R&D experience in semiconductor device development
Deep expertise in GaN or other wide-bandgap semiconductors (e.g., SiC), with a strong preference for power device experience
Demonstrated track record of technical impact and innovation in advanced device development programs
Extensive experience with power device design in GaN and/or SiC, including vertical device concepts
In-depth understanding of semiconductor manufacturing processes, integration challenges, and yield considerations
Proven experience working in shared fab and foundry environments, including external technology transfers
Strong proficiency in TCAD simulation for device physics, scaling, and optimization
Advanced data analysis skills using Python, MATLAB, or equivalent tools
Hands-on experience with GDS layout and test structure design
Expertise in wide-bandgap power device failure analysis and reliability physics
Experience with on-wafer automated DC/CV/dynamic testing and discrete component characterization

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